减反射膜与外腔半导体激光器调谐范围

• 作 者: 周小红 陈建国 李义峰 李大义 卢玉村 韩松
• 机 构: 四川联合大学
• 出 处: 半导体光电
• 发表日期: 1997年06期
• 关键词: 调谐范围 载流子密度 半导体激光器 峰值波长 增益曲线 减反射膜 外腔 增益介质 谱宽 输出功率

由于镀了减反射膜的半导体激光二极管端面的反射曲线的谱宽有限，而且，增益峰值波长随载流子密度的变化，因而实际上起作用的反射率通常都比能测到的最低反射率高，在腔内可建立的载流子密度的上限比预期的低。在考虑了这些因素后，计算了用这种管子作外腔半导体激光器（ＥＣＬＤ）的增益介质时，ＥＣＬＤ的调谐范围

Because of the limited spectral width of the reflection curve of the end face of the semiconductor laser diode coated with the antireflection film and the fact that the peak wavelength of the gain varies with the density of the carrier, the reflectivity that actually works is lower than the lowest reflectivity High, the upper limit of the carrier density that can be established in the cavity is lower than expected. After considering these factors, we calculated the tuning range of the ECLD when using this tube as the gain medium for an external cavity semiconductor laser (ECLD)