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本文描述一种完全用双极工艺制造的高速集成电路只读存贮器的设计发展和性能。讨论两种电路结构。第一种是以1024×1存贮器机构为基础的,第二种是第一种加上可变存贮器格式,三状态输出电路和芯片具有启动功能构成的。列举性能参数证实在已验证的集成电路工艺范围内,只读存贮器(ROM)具备在芯片上全译码,输入输出与标准集成逻辑电路(IC)相适应,1024位存贮器达到小于50毫微秒(ns)的取数时间。
This article describes the design development and performance of a high speed integrated circuit read only memory that is manufactured entirely in bipolar processes. Discuss two kinds of circuit structure. The first is based on 1024 × 1 memory organization, the second is the first plus variable memory format, the three state output circuit and the chip has a start-up function. Enumerating the performance parameters verified that within the scope of the validated integrated circuit process, ROM has full chip decoding, the input and output are compatible with standard integrated logic circuits (ICs), the 1024-bit memory reaches less than 50 nanoseconds (ns) take time.