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报道了 4H- Si C混合 PN / Schottky二极管的设计、制备和特性 .该器件用镍作为肖特基接触金属 ,使用了结终端扩展 (JTE)技术 .在肖特基接触下的 n型漂移区采用多能量注入的方法形成 P区而组成面对面的 PN结 ,这些 PN结将肖特基接触屏蔽在高场之外 ,离子注入的退化是在 15 0 0℃下进行了 30 min.器件可耐压 6 0 0 V,在 6 0 0 V时的最小反向漏电流为 1× 10 - 3A/ cm2 . 10 0 0μm的大器件在正向电压为 3V时电流密度为 2 0 0 A/ cm2 ,而 30 0μm的小尺寸器件在正向电压为 3.5 V电流密度可达 10 0 0 A/ cm2
Reported the design, fabrication and characterization of 4H- Si C hybrid PN / Schottky diodes using nickel as Schottky contact metal and using junction termination expansion (JTE) technique. The n-type drift region under Schottky contact Multi-energy implantation was used to form P regions to form face-to-face PN junctions, which shielded Schottky contacts from the high field and degenerated ion implantation for 30 min at 150 ° C. 6 0 0 V and a minimum reverse leakage current of 1 × 10 -3 A / cm 2 at 600 V. The current density of a large 100 μm device at a forward voltage of 3 V is 200 A / cm 2, whereas Small devices in the 30 μm range have a current density of 10 0 0 A / cm2 at 3.5 V forward voltage