论文部分内容阅读
Gd3Sc2Ga3O12 polycrystalline material for single crystal growth was prepared with Ga, Gd2O3 and Sc2O3 as starting materials and aqueous ammonia as the precipitator by co-precipitation method. The precursors sintered at various temperatures were characterized by infrared spectra (IR), X-ray diffractometry (XRD) and transmitted electron microscopy (TEM). The results showed that pure GSGG phase could be obtained at 900 ℃. The sintered powders were well-dispersed and less-aggregated in the sintered temperature range of 900~1000 ℃. XRD and TEM show that the polycrystalline particle sizes of the polycrystalline powders were about 20~50 nm. Compared with the method that Ga2O3, Gd2O3 and Sc2O3 were mixed directly and sintered to get polycrystalline materials, the synthesized temperature was lower and sintered time was shorter. Thus co-precipitation was a good method to synthesize GSGG polycrystalline material.
Gd3Sc2Ga3O12 polycrystalline material for single crystal growth was prepared with Ga, Gd2O3 and Sc2O3 as starting materials and aqueous ammonia as the precipitator by co-precipitation method. The precursors sintered at various temperatures were characterized by infrared spectra (IR), X-ray diffractometry XRD) and transmitted electron microscopy (TEM). The results showed that pure GSGG phase could be obtained at 900 ° C. The sintered powders were well-dispersed and less-aggregated in the sintering temperature range of 900-1000 ° C. XRD and TEM show that the polycrystalline particle sizes of the polycrystalline powders were about 20 to 50 nm. Compared with the method that Ga2O3, Gd2O3 and Sc2O3 were mixed directly and sintered to get polycrystalline materials, the resultant temperature was lower and the sintered time was shorter. Thus co- precipitation was a good method to synthesize GSGG polycrystalline material.