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禁止光学空间周期“Forbidden Pitch”是光学临近效应修正(OPC)中必须要面对并解决的问题之一.它主要出现在1.1 ~1.4倍(曝光波长/数值孔径)的范围内.由于在此范围内空间图像对比度的削弱,这种效应会导致图形的线宽明显小于其他空间周期.目前业界常用的规避手段主要是通过采集大量的数据校正光学临近效应修正模型,但随着半导体进入深亚微米时代,数据的采集量、置信度越发重要和关键.因此,成功地采用光学临近效应修正技术的关键和前提是建立一套成熟的相关工艺.本文着重研究空间光学和光刻工艺技术的相互关系.我们发现在禁止光学空间周期附近的光学表现与有效高斯模糊息息相关.较长的有效光酸扩散长度将显著地消弱光刻表现,进而影响禁止光学空间周期的图形表现.
Forbidden Pitch "is one of the problems that must be addressed and resolved in Optical Proximity Correction (OPC), which occurs mainly in the range of 1.1 to 1.4 times (exposure wavelength / numerical aperture) In this range, the spatial image contrast is weakened, and this effect causes the line width of the graphics to be obviously smaller than other space cycles.At present, common evade means in the industry mainly correct the optical proximity effect by collecting a large amount of data, but as the semiconductor enters In the deep sub-micron era, the amount of data collected and the degree of confidence are more and more important and critical.Therefore, the key and prerequisite for the successful adoption of the optical proximity effect correction technology is to establish a set of mature related technologies.This paper focuses on the research of space optics and lithography technology We find that the optical performance near the banned optical space period is closely related to the effective Gaussian blurring.The longer effective optical acid diffusion length will significantly weaken the lithography performance and further the ban on the graphical representation of the optical space period.