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晶体管的电流放大系数h_(FE)要随集电极电流I_C发生变化。在小电流时,h_(FE)随I_c增加而增加;当I_c增加到一定数值时,h_(FE)基本保持不变。但是,当I_c超过某一临界电流数值以后,h_(FE)会快速下降,这种现象在低集电极电压时更为明显。 本文分析了决定硅双极型晶体管电流放大系数h_(FE)的各种因素,讨论了晶体管的大电流特性,并且分析了h_(FE)随I_c增加而下降的各种机理,给出了各种分析模型的数学表达式。
Transistor current amplification factor h_ (FE) with the collector current I_C changes. At low current, h_ (FE) increases with I_c increasing; when I_c increases to a certain value, h_ (FE) remains basically unchanged. However, when I_c exceeds a certain critical current value, h_ (FE) decreases rapidly, which is more obvious when the collector voltage is low. In this paper, various factors that determine the current amplification factor h FE of a silicon bipolar transistor are analyzed. The large current characteristics of the transistor are discussed and the various mechanisms of the h FE falling with the increase of I c are analyzed. Mathematical Expression of Analytical Model.