Comparison of band-to-band tunneling models in Si and Si–Ge junctions

• 作 者: 矫亦朋 魏康亮 王泰寰 杜刚 刘晓彦
• 机 构: Shenzhen Graduate School,Peking University,Institute of Microelectronics,Peking University,
• 出 处: Journal of Semiconductors
• 发表日期: 2013年09期
• 关键词: tunneling Ge junctions simulator distinctly junction TCAD recombination largely

We compared several different band-to-band tunneling(BTBT) models with both Sentaurus and the two-dimensional full-band Monte Carlo simulator in Si homo-junctions and Si-Ge hetero-junctions. It was shown that in Si homo-junctions, different models could achieve similar results. However, in the Si-Ge hetero-junctions, there were significant differences among these models at high reverse biases(over 2 V). Compared to the nonlocal model, the local models in Sentaurus underrated the BTBT rate distinctly, and the Monte Carlo method was shown to give a better approximation. Additionally, it was found that in the Si region near the interface of the Si-Ge hetero-junctions, the direct tunneling rates increased largely due to the interaction of the band structures of Si and Ge.

We compared several different band-to-band tunneling (BTBT) models with both Sentaurus and the two-dimensional full-band Monte Carlo simulator in Si homo-junctions and Si-Ge hetero-junctions. It was shown that in Si homo-junctions However, in the Si-Ge hetero-junctions, there were significant differences among these models at high reverse biases (over 2 V). Compared to the nonlocal model, the local models in Sentaurus underrated the BTBT rate distinctly, and the Monte Carlo method was shown to give a better approximation..., it was found that in the Si region near the interface of the Si-Ge hetero-junctions, the direct tunneling rates increased largely due to the interaction of the band structures of Si and Ge.