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发光二极管因其体积小、耗电省,可靠性高(寿命达10~4——10~6小时),响应速度快(10~(-9)——10~(-7)秒)、工作电压低、能与集成电路匹配,近年来在袖珍计算机、钟表、各种小型数字化仪表等装置中得到广泛的应用。发光二极管目前大多由Ⅲ—Ⅴ族化合物半导体及它们的混晶材料制成。我们所制作的发光二极管就是用有一定混晶比x的磷化镓(GaP)和砷化镓(GaAs)的混晶材料磷砷化镓(GaA_(s1-x)P_x)这种三元化合物,依其混晶比之不同,禁带宽度可以在一个很宽的范围内变化。发光二极管是结型场致发光器件。它的主要结构是一个在外加正向电压下能发光的P—N结。图1(a)表示热平衡状态下P—N结的能带图.当给P—N结加上一定的正向
Light-emitting diode because of its small size, low power consumption, high reliability (life of 10 ~ 4 - 10 ~ 6 hours), fast response (10 ~ (-9) -10 ~ (-7) seconds) Low voltage, with integrated circuits to match, in recent years in pocket computers, watches, all kinds of small digital devices such as devices have been widely used. At present, most of the light emitting diodes are made of Group III-V compound semiconductors and their mixed crystal materials. The LED we produced is a ternary compound of gallium arsenide gallium (GaA_ (s1-x) P_x), a mixed crystal material of gallium phosphide (GaP) and gallium arsenide (GaAs) , According to their mixed crystal different, forbidden band width can be in a wide range of changes. Light emitting diodes are junction type electroluminescent devices. Its main structure is a P-N junction that emits light at an applied forward voltage. Figure 1 (a) shows the band diagram of the P-N junction in the thermal equilibrium state. When the P-N junction plus a certain positive