AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

• 作 者: 毕志伟 冯倩 郝跃 王党会 马晓华 张进成 全思 许晟瑞
• 机 构: Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,The School of Microelectronics,X
• 出 处: Chinese Physics B
• 发表日期: 2010年07期
• 关键词: AlGaN dielectric drain transistor capacitance leakage depletion comparable magni

We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD).Surface morphology of samples are observed by atomic force microscopy (AFM),indicating that the ALD NbAlO has an excellent-property surface.Moreover,the sharp transition from depletion to accumulation in capacitance-voltage (C-V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN.The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm,and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT.Based on the improved direct-current operation,the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.

We present an AlGaN / GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surf morphology of samples are observed by atomic force microscopy (AFM) metastable, depletion to accumulation in capacitance-voltage (CV) curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. fabricated MQ- HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA / mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.