Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

• 作 者: 李春伟 朱彦旭 沈光地 张勇辉 秦园 高伟 蒋文静 邹德恕
• 机 构: Beijing Optoelectronic Technology Laboratory,Institute of Electronic Engineering and Information,Bei
• 出 处: Chinese Physics B
• 发表日期: 2010年09期
• 关键词: luminous indium spreading transmittance annealed wafer brightness visible induct

In this paper AlGaInP light emitting diodes with different types of electrodes:Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 ·cm2 and 1.743×10-3 ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.

In this paper AlGaInP light emitting diodes with different types of electrodes: Au / Zn / Au-ITO Au / Ti-ITO Au / Ge / Ni-ITO and Au-ITO are fabricated. show that the Au / Zn / Au electrode substantially improves the performance of LEDs compared with the other electrodes. Because the Au / Zn / Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also the specific contact resistances between ITO and GaP, which are 1.273 × 10-6 · cm2 and 1.743 × 10-3 · cm2 between Au / Zn / Au-ITO and ITO-GaP respectively. designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.