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利用6 0 Coγ射线开展了浮栅ROM集成电路 (AT2 9C2 5 6 )总剂量辐照实验 ,研究了集成电路功耗电流和出错数在不同剂量率下的辐射响应 ;按照定义的失效标准和外推实验技术 ,探索了集成电路参数失效与功能失效时间随辐射剂量率的变化关系 ;根据失效时间与辐射剂量率的函数关系 ,预估了浮栅ROM集成电路AT2 9C2 5 6 (991 1 )和AT2 9C2 5 6 (9939)空间低剂量率辐射失效时间
The total dose radiation experiment of floating-gate ROM integrated circuit (AT2 9C2 5 6) was carried out with 60 Co γ-rays. The radiation response of the integrated circuit current consumption and the number of errors at different dose rates was studied. According to the defined failure criteria Push experimental techniques to explore the relationship between the parameter failure and the functional failure time of the integrated circuit with the radiation dose rate. According to the functional relationship between the failure time and the radiation dose rate, the floating gate ROM integrated circuits AT2 9C2 5 6 (991 1) and AT2 9C2 5 6 (9939) Space Low dose rate radiation failure time