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用高能（５００ＭｅＶ）Ｎｅ离子束对ＧａＡｓ和ＩｎＰ进行了辐照，用ＭｏｎｔｅＣａｒｌｏ模拟、正电子湮没谱学以及红外光谱研究了辐照产生的缺陷特性．结果表明，在未辐照的样品中存在单空位，经辐照后，可在样品中产生单空位；当剂量较大时，还会形成双空位甚至尺寸较大的空洞．红外光谱测量发现，在辐照后的ＧａＡｓ样品中有非晶区形成．此外，辐照在样品中还产生了反位缺陷ＧａＡｓ和ＩｎＰ以及受主杂质ＺｎＩｎ．对经１０１４ｉｏｎｓ／ｃｍ２剂量辐照的ＩｎＰ进行了光学实验，在辐照后的ＩｎＰ材料中发现了亚稳态中心．
GaAs and InP were irradiated by a high energy (500 MeV) Ne ion beam, and the defect characteristics of irradiation were studied by Monte Carlo simulation, positron annihilation spectroscopy and infrared spectroscopy. The results show that there is a single vacancy in the non-irradiated sample, after irradiation, single vacancy can be generated in the sample; when the dose is larger, double vacancy or even larger cavity can be formed. Infrared spectroscopic measurements revealed the formation of amorphous regions in irradiated samples of GaAs. In addition, the irradiation also produced anti-phase defect GaAs and InP in the sample and acceptor ZnIn. Optical experiments were performed on InP irradiated at a dose of 1014 ions / cm2 and a metastable center was found in the irradiated InP material.