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文章研究了两种可应用于毫米波频段的LTCC微带到带状线的过渡结构,包括一种微带到带状线的垂直过渡和一种微带到带状线的同层过渡。利用三维电磁场仿真软件对这两种互连过渡结构进行仿真和优化,仿真结果表明在25GHz~40GHz的工作频带内微带到带状线垂直过渡的回波损耗大于22dB,在35GHz内端到端插损优于0.5dB,40GHz内插损优于1dB;微带到带状线同层过渡的回波损耗大于32dB,40GHz内端到端插损优于0.5dB。测试结果表明,在40GHz内两种过渡结构的性能优良,能很好地满足工程应用的要求。
The article studies two LTCC microstrip to stripline transition structures that can be used in the millimeter wave band, including a vertical transition from microstrip to stripline and a transition from microstrip to stripline. The simulation and optimization of these two kinds of interconnection transition structures are carried out by using the three-dimensional electromagnetic field simulation software. The simulation results show that the return loss of vertical transition from microstrip to stripline in the working frequency band from 25 GHz to 40 GHz is greater than 22 dB, Insertion loss better than 0.5dB, 40GHz interpolation loss better than 1dB; microstrip to strip line transition with the return loss greater than 32dB, 40GHz end to end insertion loss better than 0.5dB. The test results show that the performance of the two transitional structures in 40GHz is good and can meet the requirements of engineering applications well.