论文部分内容阅读
研究了如何减小等离子体干法刻蚀导致的大肖特基漏电.用X射线光电能谱(XPS)分析刻蚀前后的AlGaN表面,发现刻蚀后AlGaN表面出现了N空位,导致肖特基栅电流偏离热电子散射模型,N空位做为一种缺陷使得肖特基结的隧穿几率增大,反向漏电增大,肖特基势垒降低.介绍了一种AlGaN/GaNHEMTs器件退火处理方法,优化退火条件为400℃,N2氛围退火10min.退火后,栅金属中的Ni与Ga原子反应从而减少N空穴造成的缺陷,器件肖特基反向漏电减小三个量级,正向开启电压升高,理想因子从3.07降低到了2.08.
A large Schottky leakage caused by plasma dry etching was studied.The X-ray photoelectron spectroscopy (XPS) analysis of AlGaN surface before and after etching showed that N vacancy appeared on the surface of AlGaN after etching, The base-grid current deviates from the hot electron scattering model and N-vacancy as a defect makes the Schottky junction tunneling probability increase, the reverse leakage increase, and the Schottky barrier decrease. A kind of AlGaN / GaNHEMTs device annealing After annealing, the Ni and Ga atoms in the gate metal react to reduce the defects caused by N holes, and the Schottky reverse leakage of the device is reduced by three orders of magnitude, The positive turn-on voltage increased and the ideal factor decreased from 3.07 to 2.08.