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分析了ＡｌＧａＩｎＰ材料的特点和ＡｌＧａＩｎＰ高亮度发光二极管发光效率的决定因素，对目前国际上研究比较成熟的一些典型结构进行了综合分析，从理论上指出ＡｌＧａＩｎＰ发光二极管在橙黄波段的发光效率的最终决定因素是光的提取效率，而在黄绿波段是发光二极管的内量子效率。并利用ＬＰ－ＭＯＣＶＤ技术制备了ｃｄ级橙黄高亮度发光二极管，发光波长峰值在６０５ｎｍ，ＦＷＨＭ为１８．３ｎｍ，２０ｍＡ工作电流下，５．０８ｃｍ（２英寸）外延片管芯平均轴向发光强度为２０ｍｃｄ，最大３０ｍｃｄ，平均工作电压１．９Ｖ，透明峰值角度２θ１／２＝１５°时轴向发光强度达到１０００ｍｃｄ。
The characteristics of AlGaInP material and the determinants of the luminescence efficiency of AlGaInP high brightness light emitting diode are analyzed. Some typical structures which are relatively mature in the world are analyzed comprehensively, and the final decision of the luminous efficiency of AlGaInP light emitting diode in the yellow band is pointed out theoretically The factor is the light extraction efficiency, while the yellow-green band is the internal quantum efficiency of the light-emitting diode. The cd-scale yellow-orange high brightness LED was prepared by LP-MOCVD. The peak emission wavelength was at 605 nm and FWHM was 18.3 nm. The average axial luminescence intensity of the 5.08 cm (2 inch) epitaxial wafer at 20 mA was 20mcd, the maximum 30mcd, the average operating voltage of 1.9V, the peak value of transparent peak 2θ1 / 2 = 15 ° axial luminous intensity reached 1000mcd.