论文部分内容阅读
在霍普金斯（ Ｈｏｐｋｉｎｓ）理论的基础上， 对方孔的传统透射掩模、衰减相移掩模以及加入光学邻近效应校正的衰减相移掩模在硅片表面光强分布的计算表明， 衰减相移掩模有提高光刻分辨率的显著功能。提出一种制作衰减相移掩模的编码方法， 理论计算表明， 该编码方法能够达到预定的衰减参数。
Based on the Hopkins theory, the calculation of the light intensity distribution on the silicon surface by traditional transmission mask, attenuation phase-shift mask and attenuation phase-shift mask with the addition of optical proximity effect shows that the attenuation Phase shift masks have a significant function of improving lithographic resolution. A coding method of making an attenuation phase shift mask is proposed. The theoretical calculation shows that the coding method can achieve the predetermined attenuation parameters.