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砷化镓是一种新型的无机材料,由于其本身具有许多优良的特性,在微波和某些光学方面的应用都显示出优点,所以受到国内外广泛的重视。制备砷化镓单晶所涉及的许多有关反应条件,影响单晶质量的因素及反应机理的问题还远没有弄清。根据国内外工作,水平布里吉曼法制备砷化镓单晶,其主要缺点是在制备过程中严重引起硅沾污。近几年来,针对这一问题,国内外均将二温区的水平布里吉曼法发展成三温区法,从而较为理想地克服了硅沾污的现象。我们参照了兄弟单位的有关经验,改装了三温区炉(其结构与温度分布见文献5),并用该炉作了体积比对砷化镓单品质量的影响的条件实验。
Gallium arsenide is a new type of inorganic material. Due to its many excellent properties, gallium arsenide (Gallium arsenide) shows its advantages in microwave and some optical applications, and therefore has attracted a great deal of attention both at home and abroad. Many problems involved in the preparation of gallium arsenide single crystal reaction conditions, the factors affecting the quality of single crystal and the reaction mechanism is far from clear. According to the work at home and abroad, the level of Bridgman method to prepare gallium arsenide single crystal, the main disadvantage is that in the preparation process caused by a serious silicon contamination. In recent years, in response to this problem, both the domestic and international fields have developed the Burleyman method of the two temperature zones into the three temperature zone method, thus overcoming the silicon contamination phenomenon ideally. We refer to the experience of brothers units, modified three-zone furnace (the temperature and temperature distribution of the structure of the literature 5), and the use of the furnace volume ratio of gallium arsenic single product quality conditions experiments.