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一、N阱CMOS——一种利于兼容的结构由于CMOS具有极低的静态功耗密度、抗干扰性好、工作电源电压范围宽、输入阻抗高,电容设计容差大等优点,所以早在六十年代就在手表等低功耗领域中得到广泛应用。然而,当时由于CMOS工艺复杂,速度不如NMOS快,其优越性尚不太明显。随着集成度的不断提高,CMOS的地位日益牢固,这是因为: (1)随着工艺技术的进步,限制集成密度的因素越来越转移到功耗密度上来。在VLSI电路中.一小芯片包含十万个以上的元件.总
First, N-well CMOS - a compatible structure Because CMOS has a very low static power density, good anti-interference, wide operating voltage range, high input impedance, large capacitor design tolerances, so as early as Sixties in the field of watches and other low-power has been widely used. However, due to the complex CMOS process, the speed is not as fast as NMOS, its superiority is not yet obvious. With the continuous improvement of integration, the status of CMOS is becoming more and more solid. This is because: (1) With the advancement of technology, the factors that limit the integration density are more and more shifted to the power density. In the VLSI circuit, a small chip contains more than 100,000 components