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文中报导了以SnO_2为基体,掺以In_2O_3等物质,用烧结法制备N型半导体气敏元件的工艺过程。由实验方法得出这种气敏材料的最佳配方为SnO_2:In_2O_3:TiO_2:Pt石棉=0.75:0.1:0.05:0.1。SnO_2是用Sn(OH)_2沉淀分解法制备的。使用前在750℃下热处理2小时。并对所制备的元件进行了加热电流、回路电压、掺杂剂等对元件灵敏度影响的特性试验。所做元件用在检测可燃性气体的气敏检漏仪上。对氢的定量检测进行了研究,所得数据和其它氢气分析仪器做了比较,结果表明,用所制的SnO_2为基体的气敏元件定量测定氢是有可能的,但须要进一步完善。
In this paper, SnO_2 as the substrate, mixed with In_2O_3 and other substances, the sintering process for the preparation of N-type semiconductor gas sensor. The best formula of this gas-sensitive material obtained by experimental method is SnO 2: In 2 O 3: TiO 2: Pt asbestos = 0.75: 0.1: 0.05: 0.1. SnO 2 was prepared by Sn (OH) 2 precipitation method. Heat treated at 750 ° C for 2 hours before use. The characteristics of the fabricated devices were also tested by the characteristics of heating current, loop voltage, dopant and so on. The components are used on gas leak detectors for the detection of flammable gases. The quantitative detection of hydrogen was studied. The obtained data were compared with other hydrogen analysis instruments. The results showed that it is possible to quantitatively determine hydrogen with the gas sensor based on SnO_2. However, it needs to be further improved.