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提出采用Si基标准工艺进行研制与标准工艺兼容的光敏三极管,重点解决光敏三极管结构与标准工艺兼容性问题,并实现对其结构、性能的优化设计。通过CADENCE软件,画出不同光敏三极管的版图;根据华润上华(CSMC)Si基标准工艺流程,采用器件模拟软件Silvaco,对光敏三极管结构进行构建和仿真;基于理论分析结果,通过设计改变结构优化光敏三极管性能。采用CSMC标准Si工艺,实现了基区面积分别为40μm×40μm、50μm×100μm、80μm×100μm和100μm×100μm光敏三极管的流片、封装和测试。结果显示,所设计的光敏三极管的响应度达到2.02A/W,放大倍数β达到60倍,最大带宽达到50 MHz左右。并且,标准Si工艺的低成本和放大集成电路的兼容性,使得制备的光敏三极管可以广泛适用于快速光耦合器、光数据接收器等应用领域。
It is proposed to develop a phototransistor that is compatible with standard processes by using Si-based standard process, and to solve the problem of compatibility between phototransistor structure and standard process, and to optimize the structure and performance of the phototransistor. According to the CSMC standard process flow of CSMC, the device simulation software Silvaco is used to build and simulate the phototransistor structure. Based on the theoretical analysis results, the structure optimization is changed by design Phototransistor performance. Using CSMC standard Si process, the base area of 40μm × 40μm, 50μm × 100μm, 80μm × 100μm and 100μm × 100μm phototransistor chip, packaging and testing. The results show that the responsiveness of the designed phototransistor reaches 2.02 A / W, the magnification β reaches 60 times and the maximum bandwidth reaches about 50 MHz. Moreover, the low cost of standard Si process and the enlargement of integrated circuit compatibility make the prepared phototransistor suitable for a wide range of applications such as fast optical couplers and optical data receivers.