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采用XRD,SEM,AFM等详细研究了氘化及氦离子注入对钪膜的表面形貌和相结构的影响.结果表明,在单晶硅及抛光Mo基片上制备的钪膜均具有(002)晶面择优取向;钪膜氘化后表面会出现大量孔洞,氘化后氘化钪(ScD2)晶粒长大,但内部会残留少量未完全氘化反应的晶粒尺寸较小的ScD_(0.33)/Sc晶粒;氦离子注入对钪及氘化钪的表面形貌没有明显影响,离子注入的氦将在钪及氘化钪晶格中聚集成泡,导致氦离子注入层中的钪及氘化钪衍射峰向低角度偏移,并且氦泡的聚集具有择优取向性.
The effects of deuteration and helium ion implantation on the surface morphology and phase structure of scandium film were investigated by XRD, SEM and AFM.The results showed that all the scandium films prepared on single crystal silicon and polished Mo substrate had (002) The dendritic scandium film has a large number of holes on the surface, and the dendritic scandium (ScD2) grains grow up, but a small amount of incompletely deuterated reaction remains in the scd_ (0.33 ) / Sc grains. The helium ion implantation has no obvious effect on the surface morphology of scandium and deuterated scandium. The ion implanted helium will aggregate into scandium and scandium deuterated lattices, resulting in scandium and The deuterated scandium diffraction peaks are shifted to a low angle, and the aggregation of helium bubbles has a preferred orientation.