论文部分内容阅读
利用X-射线衍射技术研究了InP半导体在H2SO4/H2O蚀刻溶液中之薄膜生长,分析p型InP(100)在酸性蚀刻溶液中表面氧化物的化学组成.实验中,一台12 kW的铜旋转阳极X射线源用于保证高敏感度的表面型态分析.利用广角度衍射(WAD),从一个基体氧化物的晶格组界面检测衍射线来分析蚀刻溶液H2SO4/H2O.每个衍射线出现可能引起的反应物表面层反射光束的干涉图案,生成物为具有单晶结构的磷酸铟水合物(InPO4·xH2O).观察到一组(nh,nk,nl)的广角度衍射中磷酸铟水合物(InPO4·xH2O)相的反射峰,并且侦测到在每个反射光束的干扰振荡现象.利用感应电浆耦合离子发射光谱法测定溶液中的铟(In)和磷(P)成分,分析InP在不同浓度的H2SO4/H2O溶液中的溶解速率.观察发现,在InP的氧化表面上存在混合成份的氧化物和单一成份生成物.借着ICP仪器分析测试在照光或暗室下,InP在H2SO4/H2O系统的溶解率差异几乎是不可分辨的.藉由X射线结果对比JCPDS卡标准化合物中的数据,可获得酸性溶液蚀刻反应中各种表面氧化物的结构特点和反应现象.
The film growth of InP semiconductor in H2SO4 / H2O etching solution was investigated by X-ray diffraction and the chemical composition of the surface oxide of p-type InP (100) in acidic etching solution was analyzed. In the experiment, a 12 kW copper rotation The anode X-ray source was used to ensure the analysis of the surface morphology of the high sensitivity. Wide-angle diffraction (WAD) was used to analyze the diffraction lines from the lattice group interface of a matrix oxide to analyze the etching solution H2SO4 / H2O. Each diffraction line appeared The interference pattern of the reflected light beam from the surface layer of the reactant may be caused and the resulting product is indium phosphate hydrate (InPO4.xH2O) having a single crystal structure. A group of (nh, nk, nl) (InPO4.xH2O) phase and detected the interference oscillation phenomenon at each reflected beam.The contents of indium (In) and phosphorus (P) in the solution were determined by inductively coupled plasma atomic emission spectrometry InP dissolved in different concentrations of H2SO4 / H2O solution was observed in the oxidation of InP surface oxides and mixed components of the single component of the product by ICP instrumental analysis In illumination or dark room, InP in H2SO4 / H2O system dissolution rate difference Almost indistinguishable. By comparison of the results of X-ray data of JCPDS card standard compound is obtained in the acid solution etching reaction and structural characteristics of the reaction of various phenomena of surface oxides.