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金属有机化合物汽相沉积 (MOCVD)技术是制备用于红外焦平面阵列 (IRFPA)的高质量碲镉汞 (HgCdTe)薄膜材料的重要手段。文中讨论了汞源温度、生长温度、衬底材料及互扩散多层工艺 (IMP)等因素在MOCVD外延生长碲镉汞薄膜过程中的作用机理 ,并选择合适的生长条件获得了质量优良的碲镉汞薄膜。
Metal organic compound vapor deposition (MOCVD) technology is an important means of preparing high-quality mercury cadmium telluride (HgCdTe) thin film materials for infrared focal plane array (IRFPA). In this paper, the mechanism of mercury source temperature, growth temperature, substrate material and inter-diffusion multi-layer process (IMP) and other factors in the MOCVD epitaxial growth of HgCdTe thin films were discussed, and the appropriate growth conditions were obtained Te Cadmium and mercury thin film.