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利用光学薄膜原理 ,计算了采用晶片键合技术来提高以 Ga As为衬底的立方相 Ga N的出光效率的理论可行性 .以 Ni为粘附层 ,Ag为反射层的 Ni/ Ag/ Au薄膜体系可以使立方 Ga N的出光效率从理论上提高 2 .6 5倍左右 .实验结果证实 ,利用键合方法实现的以 Ni/ Ag/ Au作为反射膜的样品的光反射率比未做键合的 Ga N/ Ga As样品的光反射率在理论计算的 4 5 9.2 nm处提高了 2 .4倍 .
Based on the theory of optical thin film, the theoretical feasibility of using wafer bonding technology to improve the light extraction efficiency of GaAs-based cubic GaN has been calculated.Using Ni as the adhesion layer and Ag as the reflective layer of Ni / Ag / Au Film system can make the cubic Ga N from the theoretical light output efficiency of 2.56 times or so.Experimental results show that the use of bonding method to achieve the Ni / Ag / Au as a reflective film sample light reflectivity than the non-key The optical reflectance of the combined Ga N / Ga As samples increased 2.4-fold from the theoretical calculated value of 45 5 nm.