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该文介绍了一种在激光器上加一个整体的热电(珀尔帖)冷却和散热装置,对集成光路中或分立芯片中的GaAs/GaAlAs激光器进行冷却的新方法。这种冷却方式既降低了结温又能使结温稳定,可使发热导致的波长漂移等有害影响减到最小。文中给出了单片半导体台式结构电特性和热特性的统一说明。本工作证明了通过沉积—相当厚的金属层(这一层也作为
This paper presents a new method of cooling a GaAs / GaAlAs laser in an integrated optical path or in a discrete chip by adding an integral thermoelectric (Peltier) cooling and cooling device to the laser. This cooling method reduces both junction temperature and junction temperature, minimizing the harmful effects such as wavelength drift caused by heat. The paper gives a unified description of the electrical and thermal characteristics of a single-chip semiconductor benchtop structure. This work proves that by depositing a rather thick metal layer (this layer also serves as