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引言目前以下面三个方向的发展决定了激光二极管线阵和列阵方面的进展：生长量子尺寸半导体多层膜异质结构的MOS-氢化物外延工艺，制造元件散热的高热导率和其它给定性质的新材料和液体冷却的高效散热器工艺。在MOS-氢化物外延方面最复杂和重要的课题是提高激光异质结的总效率
INTRODUCTION Presently progress in the following three directions has determined advances in laser diode arrays and arrays: MOS-hydride epitaxial processes for growth of quantum-size semiconductor multi-layer heterostructures, high thermal conductivity for the fabrication of component heat sinks, and other Qualitative new materials and liquid cooling efficient radiator process. The most complex and important issue in the MOS hydride epitaxy is to increase the overall efficiency of the laser heterojunction