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一、前言迫切需要高集成化和高速化的动态RAM,与其他LSI相比,常常积极采用最尖端技术,因而扮演了工艺技术尖兵的角色。目前在以2μm设计规则工艺为基础的256K动态RAM中,为了提高速度,在栅电极制作上已经部分地采用了多晶硅-硅化物结构(在多晶硅上形成耐熔金属硅化物的双层结构),从而开始了新材料在超LSI上的真正适用期。随着LSI向1M、4M、16M的高集成化微细化方向发展,栅电极布线电阻的增大问题,伴随浅结化而产生的扩
I. INTRODUCTION There is an urgent need for highly integrated and high-speed dynamic RAM, which is often actively employed in cutting-edge technologies compared to other LSIs and thus plays a leading role in process technology. Currently, in 256K dynamic RAM based on a 2μm design rule process, a polycide-silicide structure (double-layered structure of refractory metal silicide formed on polysilicon) has been partially adopted for the gate electrode production in order to increase the speed, Thus starting the real life of new materials in the super LSI. With the LSI to 1M, 4M, 16M highly integrated miniaturization direction, the gate electrode wiring resistance increases, with the resulting shallow expansion