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a-Si.C.N:H thin films have been deposited at room temperature by r.f. reactive-sputtering of a Si target in an Ar+H2+N2+CH4 gas mixture. Fourier transform infrared-absorption spectroscopy and optical absorption spectra have been investigated for the films. The study shows that the film structure and optical- electrical properties are obviously modified readily by controlling the process parameters of deposition. The nitrogen-rich a-Si:C:N: H films are thermally stable within the temperature ranging from 200 to 800℃. They are of interest for the potential applications in electronic devices.
a-Si.CN:H thin films have been deposited at room temperature by rf reactive-sputtering of a Si target in an Ar + H2 + N2 + CH4 gas mixture. Fourier transform infrared-absorption spectroscopy and optical absorption spectra have been investigated for The films show that the film structure and optical-electrical properties are obviously modified readily by controlling the process parameters of deposition. The nitrogen-rich a-Si: C: N: H films are thermally stable within the temperature ranging from 200 to 800 ℃. They are interest for the potential applications in electronic devices.