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本文论述了 n 沟 MOSFET 低温器件特性的改进;从实验和理论上探讨了在室温至液氮温度范围内、沟道长度为1μ数量级的多晶硅栅 FET 的器件参数;器件的直流特性的实验值与二维电流输运模型的预计值非常一致。这表明,在上述温度范围内,器件行为将是很好的,而且也是可以预期的;此外,根据上述结果,还述及适于液氮温度下工作的、沟道长度为1μ的增强型 FET 的器件设计.
In this paper, we discuss the improvement of n-channel MOSFET low temperature device characteristics. The device parameters of polysilicon gate FET with channel length of 1μ range from room temperature to liquid nitrogen temperature are discussed experimentally and theoretically. The predicted values of the two-dimensional current transport model are very consistent. This indicates that the device behavior will be good and predictable over the above temperature range. Furthermore, based on the above results, the enhancement FETs with channel lengths of 1μ suitable for operation at liquid nitrogen temperatures are also described Device design.