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用等温生长法在CdTe衬底上生长的Hg_(1-x)Cd_xTe外延层具有镜面状表面形态、径向组分均匀度高和突出的电子特性(即x接近0.15的电子迁移率数值为500000厘米~2/伏-秒)。生长法的新特点是利用富碲HgCdTe而不是以前采用的HgTe(或化学计量Hg_(1-x)Cd_xTe)作源材料。改变源材料组分和生长温度就可得到所要求的x值。利用热管来达到高精度控温以及使液体(源)和气相中的对流减到最小。
The Hg_ (1-x) Cd_xTe epitaxial layer grown on the CdTe substrate by isothermal growth has a mirror-like surface morphology, high radial component uniformity and outstanding electronic properties (ie, the electron mobility of x close to 0.15 is 500000 Cm ~ 2 / V - second). A new feature of the growth method is the use of tellurium-rich HgCdTe rather than HgTe (or stoichiometric Hg_ (1-x) Cd_xTe) as the source material. The desired value of x can be obtained by varying the source material composition and the growth temperature. Utilize heat pipes to achieve high precision temperature control and to minimize convection in the liquid (source) and gas phases.