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研究了 ECR- PAMOCVD在蓝宝石衬底上生长 Ga N外延层时衬底的清洗方法和缓冲层结构对于 Ga N晶体质量的影响 ,提出了新的衬底清洗方法和双缓冲层结构 .实验表明这种方法能够提供一个很好的生长基底 ,可以有效地改善 Ga N外延层的晶体质量
The influence of the substrate cleaning method and buffer layer structure on the quality of Ga N crystal grown by ECR-PAMOCVD on GaN epitaxial layer on sapphire substrate was studied, and a new substrate cleaning method and double buffer layer structure were proposed. This kind of method can provide a very good growth substrate, which can effectively improve the crystal quality of the Ga N epitaxial layer