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高剂量、大束流的O~+或N~+注入硅中经高温退火后能形成质量很好的SOI(Silicon onInsulater)材料。在波数范围为5000—1500cm~(-1)的红外波段内,硅及SiO_2或Si_3N_4绝缘埋层对红外光均无吸收。采用计算机模拟不同处理条件下的样品在该波段范围的红外反射谱,得到了样品的折射率随深度的变化关系,所得结果与透射电子显微镜、离子背散射等方法所得的分析结果符合得很好。
High-dose, large beam O ~ + or N ~ + implanted into silicon can be annealed at high temperatures to form a very good SOI (Silicon on Insulater) material. In the waveband of 5000-1500cm ~ (-1) in the infrared band, silicon and SiO_2 or Si_3N_4 insulating buried layer have no absorption of infrared light. The infrared reflectance spectra of the sample under different processing conditions were simulated by computer. The refractive index of the sample was obtained with the change of depth. The obtained results were in good agreement with those obtained by transmission electron microscopy and ion backscattering .