论文部分内容阅读
本文对大量的合金型P-N结结面的“光滑、平整”情况,作了许多观测结果的报导,并分析了产生多结角的原因及其对P-N结击穿特性的影响,解剖、观测结果证明,欲获得平整、光滑的合金型P-N结,使用无位错硅片并不是最有利的。适当的位错密度(1×10~4～5×10~3/cm~2)对于增加合金结的结深和改善结的质量都是有利的(约2000字,4图)。
In this paper, a great deal of observation results have been reported on the “smooth and flat” situation of a large number of PN junctions, and the reasons for the multijunction angle and its effect on the breakdown characteristics of PN junctions have been analyzed. The anatomical and observational results Proved, to get a smooth, smooth alloy PN junction, the use of dislocation-free silicon is not the most favorable. Appropriate dislocation density (1 × 10 ~ 4 ~ 5 × 10 ~ 3 / cm ~ 2) is beneficial to increase the junction depth of the alloy junction and improve the junction quality (about 2000 words, Figure 4).