论文部分内容阅读
用液相外延法生长了高纯 In_(0·53)Ga_(0·47)As 外延层,其室温电子迁移率高至13,800cm~2/v·s,相应的净电子浓度在10~(15)cm~(-3)的低端。至今所测得的最高78°K 迁移率约70,000cm~2/v·s,其净电子浓度为3.4×10~(14)cm~(-3)。这样高的迁移率能显著改善常断型 FET 的性能。推导出 In_(0·53)Ga_(0·47)As 的肖特基势垒高度约0.28ev,这就使栅极漏泄较大。提出一种新结构,它能减小栅极漏泄,并且,即使正栅偏压很小时,也能把电子限制到 In_(0·53)As 沟道内。这种结构是在 InGaAs 沟道与金属栅之间用了一层 n~--InP 外延层。
The high-purity In_ (053) Ga_ (0.47) As epitaxial layer was grown by liquid-phase epitaxy at room temperature with high electron mobility of 13,800cm ~ 2 / v · s and corresponding net electron concentration of 10 ~ ( 15) cm ~ (-3) of the low end. Up to now, the highest 78 ° K mobility is about 70,000cm 2 / v · s and the net electron density is 3.4 × 10 ~ (14) cm -3. Such a high mobility can significantly improve the performance of a normally-off FET. The Schottky barrier height of In_ (0.53) Ga_ (0.47) As is estimated to be about 0.28 eV, which leads to larger gate leakage. A new structure is proposed to reduce the gate leakage and limit the electron to the In_ (0.53) As channel even when the positive gate bias is small. In this structure, an n ~ - InP epitaxial layer is used between the InGaAs channel and the metal gate.