论文部分内容阅读
本文介绍用170SXFT-IR付里叶变换红外光谱仪,测定500～1200℃、4～120小时热处理半导体CZSi的红外光谱.探讨了不同退火条件下Si中氧的退火行为和光谱峰值变化的物理本质.计算了Si中氧的溶解度.
In this paper, the infrared spectra of semiconductor CZSi annealed at 500 ~ 1200 ℃ for 4 ~ 120 hours were measured by 170SXFT-IR Fourier transform infrared spectroscopy.The physical properties of oxygen annealing and the peaks of spectra under different annealing conditions were discussed. The solubility of oxygen in Si was calculated.