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A monolithic integrated low noise amplifier(LNA) based on a SiGe HBT process for a global navigation satellite system(GNSS) is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is adopted and a method and design equations of monolithically designing the LC load and the output impedance matching circuit are introduced. The LNA simultaneously reaches excellent noise and input/output impedance matching. The measurement results show that the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of..6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies 600×650 μm2 die area.
A monolithic integrated low noise amplifier (LNA) based on a SiGe HBT process for a global navigation satellite system (GNSS) is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is and a method and designing equations of monolithically The LNA measurements show the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of 6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies a 600 × 650 μm2 die area.