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以双中心模型为基础,理论研究了LiNbO_3:Cu:Ce晶体在稳态情况下的非挥发双光双步全息存储性能.研究中考虑了在晶体深能级中心Cu~+/Cu~(2+)与浅能级中心Ce~(3+)/Ce~(4+)之间由隧穿效应引起的电荷直接交换过程.结果表明,总的空间电荷场大小主要由深能级上的空间电荷场所决定,并且非挥发全息存储性能主要由隧穿效应引起的深能级中心Cu~+/Cu~(2+)与浅能级中心Ce~(3+)/Ce~(4+)之间的电荷直接交换过程所决定.与隧穿效应相关的材料参数对于非挥发双光双步全息存储的性能起到了至关重要的作用.
Based on the bivariate model, the non-volatile two-light double-step holographic storage performance of LiNbO_3: Cu: Ce crystals under steady-state conditions was theoretically investigated. The crystal structure of Cu ~ + / Cu ~ +) And Ce ~ (3 +) / Ce ~ (4 +) at the shallow level.The results show that the total size of the space charge field is dominated by the space above the deep level Charge sites, and the non-volatile holographic memory properties are mainly caused by the tunneling effect of Cu ~ + / Cu ~ (2+) and Ce ~ (3 +) / Ce ~ (4+) Between the charge of the direct exchange process determined by the tunneling effect of the material parameters related to the non-volatile dual-optical double-holographic storage performance has played a crucial role.