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本文讨论了中、低频段的晶体管放大器最佳噪声源电阻与最大功率传输之间的定量关系,分析了获得最佳噪声系数和同时获得阻抗匹配的电路结构。并讨论了共射组态的E_n-I_n相关系数的数量关系。
This paper discusses the quantitative relationship between the best noise source resistance and the maximum power transmission of the transistor amplifier in medium and low frequency bands and analyzes the circuit structure for obtaining the best noise figure and achieving the impedance matching at the same time. The relationship between E_n-I_n correlation coefficients of co-active configuration is also discussed.