论文部分内容阅读
一、前言低噪声微波连续波振荡器已经用一个10微米的硅薄片两边做两个PtSi肖特基势垒接触的金属—半导体—金属(MSM)的结构获得,在5千兆赫,输出了50毫瓦以上的连续波功率并具有1.8％的效率。距离载波1兆赫的调频噪声是22.8分贝,它比硅雪崩振荡器的噪声低得多。微波振荡的机理是两个原因:(1)由于在前向偏置的接触点的少数载流子的注入使该处载流子数目指数地增加;(2)注入载流子通过耗尽区的渡越时间
I. INTRODUCTION Low-noise microwave CW oscillators have been fabricated using a two-SiSiT barrier contact metal-semiconductor-metal (MSM) structure on both sides of a 10 micron silicon wafer, yielding 50 CW power above milliwatts and 1.8% efficiency. The FM noise at 1 MHz from the carrier is 22.8 dB, which is much less noise than the silicon avalanche oscillator. The mechanism of microwave oscillation is for two reasons: (1) there is an exponential increase in the number of carriers due to the injection of minority carriers at the forward-biased contact point; (2) the injection of carriers through the depletion region Transit time