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采用磁控共溅射法在Al2O3(0001)基片上沉积了Zn1-xCoxO(x=0.08~0.31%)薄膜,研究了基片温度对Co掺杂ZnO薄膜结构和磁性的影响。结果表明:Al2O3(001)基片很好地诱导了ZnCoO薄膜(002)取向生长,并且所有的薄膜均显示室温铁磁性。较低的基片温度不仅能有效抑制薄膜中Co2O3杂质相的产生,而且薄膜磁矩较大。紫外-可见光谱也表明,薄膜中Co2+取代了ZnO中Zn2+的位置。
The films of Zn1-xCoxO (x = 0.08-0.31%) were deposited on Al2O3 (0001) substrate by magnetron sputtering. The effect of substrate temperature on the structure and magnetic properties of Co-doped ZnO thin films was investigated. The results show that the Al2O3 (001) substrate induced the (002) orientation growth of the ZnCoO thin films well, and all the films showed room temperature ferromagnetism. The lower substrate temperature can not only effectively inhibit the Co2O3 impurity phase in the film, but also the magnetic moment of the film is larger. The UV-Vis spectra also show that Co2 + replaces Zn2 + in ZnO.