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由于使用了硅工艺,使对在中红外区(3～5微米)工作之非本征硅掺杂红外探测器的兴趣正与日俱增。在高于77K温度下工作的Si:In光-离子化横截面是以前测定的,本文介绍在两种背景光子通量密度及探测器偏压条件下,温度从4～70K的信噪比数据。这些数据是从掺铟2.7×10~(17)/厘米~3的样品得到的。测出量子效率约50％。作为温度函数之探测度D~*,在55K约降低10％,在70K时将降到更低。迁移率及测得的响应率数据用来确定空穴寿命,发现寿命随温度的升高而增大。文献[1]提出了深杂质能级的光谱响应模型。测得的光谱响应数据与理论预测很吻合。
Interest in extrinsic silicon-doped infrared detectors operating in the mid-infrared region (3 to 5 microns) is increasing due to the use of silicon processes. The Si: In photo-ionization cross-section working at temperatures above 77K was previously measured. This paper presents the signal-to-noise data for temperature from 4 to 70K at two background photon flux densities and detector bias conditions . These data are obtained from samples doped with indium 2.7 × 10 ~ (17) / cm ~ 3. Measured quantum efficiency of about 50%. Probability D * as a function of temperature is approximately 10% lower at 55K and lower at 70K. Mobility and measured response data were used to determine hole lifetime and found that lifetime increased with increasing temperature. Literature [1] proposed a spectral model of deep impurity level. The measured spectral response data is in good agreement with the theoretical prediction.