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用深能级瞬态谱及光电容谱方法，研究了１．５５μｍ近红外波段的Ｈｇ１－ｘＣｄｘＴｅ光伏探测器的深能级缺陷．结果表明，探测器中存在位于禁带中央附近的两个施主深能级．它们可能来源于ＨｇＣｄＴｅ材料中的本征缺陷，例如Ｈｇ间隙缺陷Ｈｇ１及Ｔｅ反位缺陷ＴｅＨｇ．
The deep level defects of the Hg1-xCdxTe photovoltaic detector in the 1.55μm NIR band were studied by deep level transient spectroscopy and photoplethysmography. The results show that there are two deep donor levels in the detector near the center of the forbidden band. They may be derived from intrinsic defects in HgCdTe materials such as Hg gap defects Hg1 and Te anti-gap defects TeHg.