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设计了适合于倒装的大功率GaN基LED芯片结构,在倒装基板硅片上制作了金凸点,采用热超声倒装焊接(FCB)技术将芯片倒装在基板上。测试结果表明获得的大面积金凸点连接的剪切力最高达53.93g/bump,焊接后的GaN基绿光LED在350mA工作电流下正向电压为3.0V。将热超声倒装焊接技术用于制作大功率GaN基LED器件,能起到良好的机械互连和电气互连。
A high-power GaN-based LED chip structure suitable for flip-chip design is designed. Gold bumps are fabricated on the flip-chip silicon substrate, and the chip is flip-chip mounted on the substrate by using thermal ultrasonic flip chip (FCB) technology. The test results show that the shearing force of the large-area Au bump connection is up to 53.93g / bump and the forward voltage of the GaN-based green LED after welding is 3.0V under the 350mA working current. Thermal ultrasonic flip-chip welding technology for the production of high-power GaN-based LED devices, can play a good mechanical and electrical interconnection.