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1994年是一年一度的IEEE国际电子器件会议(IEDM)40周年.在12月11日～14日于旧金山Hilton举行的IEDM年会上,世界著名的研究人员透露了他们在半导体IC和其他器件以及器件制造工艺取得的最新惊人的进展,在36个会场上共发表了200篇论文.这次会议的重点有:吉位级DRAM、高密度闪速存储器、极高速双极IC、各种各样的功率器件、高度集成的光电子器件、先进传感器、平板显示器以及最新的通信器件.同时,各研究人员还分析了制造这些半导体器件的工艺技术.这次会议还同时举办了一个交互软件展览会,展示了各种不同的TCAD工具,其重点是为了解决现实世界的工业问题.
1994 was the 40th anniversary of the annual IEEE International Electronic Devices Conference (IEDM). At the IEDM annual meeting in San Francisco, December 11-14, world-famous researchers disclosed their semiconductor ICs and other devices. As well as the latest amazing progress made in the device manufacturing process, a total of 200 papers were published in 36 venues. The focus of this conference was: Gigabit DRAM, high-density flash memory, extremely high-speed bipolar IC, and various Power devices, highly integrated optoelectronic devices, advanced sensors, flat panel displays, and the latest communications devices. At the same time, various researchers also analyzed the process technology for manufacturing these semiconductor devices. The conference also held an interactive software exhibition. , shows a variety of different TCAD tools, the focus of which is to solve real world industrial problems.