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HgCdTe是一种有广泛应用前景的半导体光电材料。从投资上看,它已成为仅次于Si和GaAs的第三种最重要的半导体。本文系统地介绍了HgCdTe材料的基本性质及HgCdTe的晶体生长,对液相外延生长HgCdTe晶体的理论和工艺问题作了较详细的论述。
HgCdTe is a promising semiconductor optoelectronic material. From an investment perspective, it has become the third most important semiconductor after Si and GaAs. This paper systematically introduces the basic properties of HgCdTe material and the crystal growth of HgCdTe. The theoretical and technological problems of liquid epitaxial growth of HgCdTe crystal are discussed in detail.