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意法半导体最新的900V MDmesh K5超结MOSFET管让电源设计人员能够满足更高功率和更高能效的系统需求,具有同级最好的导通电阻(RDS(ON))和动态特性。ST推出同级领先的900V MOSFET管,提升反激式转换器的输出功率和能效
STMicroelectronics’ latest 900V MDmesh K5 super-junction MOSFETs allow power supply designers to meet the needs of higher-power and more energy-efficient systems with best on-state resistance (RDS (ON)) and dynamic characteristics at the same level. ST introduced the same level of leading 900V MOSFET tube to enhance the flyback converter output power and energy efficiency