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用ＭＯＣＶＤ生长ＧａＮ的过程中，由于ＮＨ３与ＴＭＧ化学性质的巨大差异，以及通常１０００℃以上的生长温度，使得其中反应过程比较复杂，且多种反应并存。文章首先对这样一个多元体系运用原子系数矩阵，计算出反应体系中存在的独立反应方程，得到两组代表不同反应机制的独立反应。描述了两组反应的主要特征。计算了以ＮＨ３为氮源，以ＴＭＧ为镓源，ＭＯＣＶＤ生长ＧａＮ过程中各种热力学平衡参数。由计算结果知，ＮＨ３的不彻底分解的反应是ＭＯＣＶＤ中正常生长ＧａＮ的化学反应。
In the process of GaN growth by MOCVD, due to the great difference between the chemical properties of NH3 and TMG, and the growth temperature usually above 1000 ° C., the reaction process is complicated and a variety of reactions coexist. In this paper, we first calculate the independent reaction equation existing in the reaction system by using the atomic coefficient matrix for such a multiple system, and obtain two sets of independent reactions that represent different reaction mechanisms. The main features of the two sets of reactions are described. The thermodynamic equilibrium parameters for the growth of GaN using NH3 as a nitrogen source, TMG as a gallium source and MOCVD were calculated. From the calculation results, it is known that the incompletely decomposed reaction of NH3 is a chemical reaction of normally growing GaN in MOCVD.