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采用典型的半导体光刻工艺用ＢＨＦ／ＨＮＯ３溶液成功地刻蚀了ＰＺＴ（５２／４８）薄膜。研究了薄膜的微观结构对微图形的制作精度的影响。结果表明，在薄膜中晶粒团聚区域和周围区域的刻蚀速率存在着差异，晶粒小的薄膜有利于获得高保真的从掩膜到薄膜的图形转移，晶粒团聚区域的尺寸基本决定了图形转移的误差。
PZT (52/48) thin films were successfully etched using a typical semiconductor lithography process with BHF / HNO3 solution. The influence of the microstructure of the film on the precision of micro-patterning was studied. The results show that there is a difference in the etching rate between the grain agglomeration region and the surrounding region in the film. The small grain size film facilitates the high-fidelity pattern transfer from the mask to the thin film, and the size of the grain agglomeration region is basically determined Graphic transfer error.