0.5微米精细CMOS工艺

• 作 者: 仁田山 晃宽 徐增禧
• 机 构: 东芝公司综合所,东芝公司综合所
• 出 处: 微电子学
• 发表日期: 1989年02期
• 关键词: 微米 微细化 噪声容限 栅长 双极型 试制工作 驱动能力 寄生电阻 短沟效应 沟道长度

近年来,开发VLSI用CMOS工艺技术,显得极为重要。这主要是因为CMOS电路具有功耗低,噪声容限大和电路设计比较容易等优点。另一方面,从电路高速化的观点看,CMOS晶体管正在向微细化发展,0.5微米微细栅长试制工作也在积极进行。这是为了在充分发挥上述CMOS特殊性质的基础上,通过微细化来提高驱动能力、降低负载栅电容。其目的之一,是为获得与双极型和GaAs同样的高速度。

In recent years, the development of VLSI CMOS process technology, it is extremely important. This is mainly because CMOS circuits have the advantages of low power consumption, large noise margin and relatively easy circuit design. On the other hand, CMOS transistors are being miniaturized from the viewpoint of circuit speeding up, and trial production of a 0.5-micron fine gate length is actively carried out. This is to give full play to the above-mentioned CMOS special properties, based on the miniaturization to improve the driving ability, reduce the load gate capacitance. One of its goals is to achieve the same high speed as bipolar and GaAs.