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分别配制了Bi含量为90,100和110mole%的前驱体,在Pt/Ti/SiO2/Si衬底上制备Bi3.4Ce0.6Ti3O12薄膜,研究前驱体中Bi含量对其微观结构和铁电性能的影响.前驱体中Bi含量增加可以有效地改善薄膜的结晶性能和表面形貌.对Pt/Bi3.4Ce0.6Ti3O12/Pt电容结构进行电学性能测量,发现Bi过量10%的前驱体制备的Bi3.4Ce0.6Ti3O12薄膜具有较好的性能:室温下,在测试频率1kHz时,其介电常数为172,介电损耗为0.033;在测试电场为600kV/cm时,其剩余极化值(2Pr)和矫顽电场(2Ec)分别达到67.1μC/cm2和299.7kV/cm;同时还表现出良好的抗疲劳特性和绝缘性能.
The Bi3.4Ce0.6Ti3O12 thin films were prepared on Pt / Ti / SiO2 / Si substrates with Bi content of 90, 100 and 110 mole% respectively. The effects of Bi content on the microstructure and ferroelectric properties of the films were investigated. The increase of Bi content in the precursor can effectively improve the crystallinity and surface morphology of the film.According to the electrical properties of Pt / Bi3.4Ce0.6Ti3O12 / Pt capacitor, the Bi3.4Ce0 precursor with 10% excess Bi was found. 6Ti3O12 thin films have better performance: at room temperature, the dielectric constant is 172 and the dielectric loss is 0.033 at the test frequency of 1 kHz. The remanent polarization (2Pr) and coercivity The electric field (2Ec) reached 67.1μC / cm2 and 299.7kV / cm, respectively. At the same time, it also showed good anti-fatigue properties and insulation properties.